Description
The G5016 is dual N-channel MOSFET power switch designed for high-side load-switching applications, and
nthe device has a typical RDS(ON) of 16m? and the output current is limited to 6A. Each switch is independently controlled by an on/off input (EN1, EN2), which is capable of interfacing directly with low-voltage GPIO control signals.
In the G5016, a 250? on-chip load resistor is added for quick output discharge (QOD) when the switch is
turned off. The rise time of the device is internally controlled in order to avoid in-rush current and can be adjusted using a ceramic capacitor on the CTx pins.
