AO4712 MOSFET N-CH 30V 11.2A 8-SOIC 4712

රු150.00 රු125.00

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AO4712 MOSFET. Datasheet

Type Designator: AO4712

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.1 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.1 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 2.4 nS

Drain-Source Capacitance (Cd): 128 pF

Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm

Package: SO-8

AO4712 Transistor Equivalent Substitute – MOSFET Cross-Reference Search